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DMC2710UV-7 Ƙayyadaddun Fasaha

MOSFET BVDSS: 8V-24V SOT563

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Factory Lead Time 24 Weeks
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 6
Terminal Position DUAL
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 460mW Ta
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.1A Ta 800mA Ta
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 1.1A
DS Breakdown Voltage-Min 20V
Power Dissipation-Max (Abs) 0.8W
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel Complementary
Rds On (Max) @ Id, Vgs 400m Ω @ 600mA, 4.5V, 700m Ω @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 42pF 49pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 600pC, 700pC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.4Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
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Sauran sun hada da   "DMC27"   sassa

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