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SIHB22N60E-GE3 Ƙayyadaddun Fasaha

MOSFET N-CH 600V 21A D2PAK

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Packaging Tube
Other Names SIHB22N60EGE3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package D2PAK
Power Dissipation (Max) 227W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK
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SIHB22N60E-GE3 masana'antun iri: Electro-Films (EFI) / Vishay, Bonchip hannun jari, SIHB22N60E-GE3 farashin tunani. SIHB22N60E-GE3 sigogi, SIHB22N60E-GE3 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da SIHB22N60E-GE3 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo SIHB22N60E-GE3 zanen fil da zane-zane da kuma tsarin amfani da aiki, SIHB22N60E-GE3 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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