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HGT1S7N60A4DS Ƙayyadaddun Fasaha

IGBT 600V 34A 125W TO263AB

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - IGBTs - Goma
Manufacturer Fairchild/ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 600V
Test Condition 390V, 7A, 25 Ohm, 15V
Switching Energy 55µJ (on), 60µJ (off)
Reverse Recovery Time (trr) 34ns
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Gate Charge 37nC
Current - Collector (Ic) (Max) 34A
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Td (on/off) @ 25°C 11ns/100ns
Supplier Device Package TO-263AB
Power - Max 125W
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
IGBT Type -
Current - Collector Pulsed (Icm) 56A
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HGT1S7N60A4DS masana'antun iri: Fairchild/ON Semiconductor, Bonchip hannun jari, HGT1S7N60A4DS farashin tunani. HGT1S7N60A4DS sigogi, HGT1S7N60A4DS Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da HGT1S7N60A4DS Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo HGT1S7N60A4DS zanen fil da zane-zane da kuma tsarin amfani da aiki, HGT1S7N60A4DS koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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