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IXFH20N100P Ƙayyadaddun Fasaha

MOSFET N-CH 1000V 20A TO-247

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 6.5V @ 1mA
Supplier Device Package TO-247AD (IXFH)
Rds On (Max) @ Id, Vgs 570 mOhm @ 10A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 1000V (1kV)
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series HiPerFET™, PolarP2™
Power Dissipation (Max) 660W (Tc)
Package / Case TO-247-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
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IXFH20N100P masana'antun iri: IXYS Corporation, Bonchip hannun jari, IXFH20N100P farashin tunani. IXFH20N100P sigogi, IXFH20N100P Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da IXFH20N100P Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo IXFH20N100P zanen fil da zane-zane da kuma tsarin amfani da aiki, IXFH20N100P koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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