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IXTM40N30 Ƙayyadaddun Fasaha

POWER MOSFET TO-3

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series GigaMOS™
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-204AE
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-204AE
Rds On (Max) @ Id, Vgs 88 mOhm @ 20A, 10V
Package / Case TO-204AE
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
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IXTM40N30 masana'antun iri: IXYS Corporation, Bonchip hannun jari, IXTM40N30 farashin tunani. IXTM40N30 sigogi, IXTM40N30 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da IXTM40N30 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo IXTM40N30 zanen fil da zane-zane da kuma tsarin amfani da aiki, IXTM40N30 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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