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AUIRFP1405 Ƙayyadaddun Fasaha

MOSFET N-CH 55V 95A TO-247AC

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.3m Ω @ 95A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 150 ns
Continuous Drain Current (ID) 95A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 640A
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 310W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 95A Tc
Rise Time 160ns
Vgs (Max) ±20V
Turn-Off Delay Time 140 ns
JEDEC-95 Code TO-247AC
Drain to Source Breakdown Voltage 55V
Height 20.7mm
Width 5.31mm
REACH SVHC No SVHC
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