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BSM75GD120DN2BOSA1 Ƙayyadaddun Fasaha

IGBT 2 LOW POWER ECONO3-1

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
Number of Elements 6
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 1.5mA
Current - Collector (Ic) (Max) 103A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
NTC Thermistor No
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case Module
Transistor Element Material SILICON
Part Status Not For New Designs
Number of Terminations 39
Terminal Position UPPER
JESD-30 Code R-XUFM-X39
Configuration Three Phase Inverter
Power - Max 520W
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 100 ns
Turn Off Time-Nom (toff) 520 ns
Input Capacitance (Cies) @ Vce 5.1nF @ 25V
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BSM75GD120DN2BOSA1 masana'antun iri: Infineon Technologies, Bonchip hannun jari, BSM75GD120DN2BOSA1 farashin tunani. BSM75GD120DN2BOSA1 sigogi, BSM75GD120DN2BOSA1 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da BSM75GD120DN2BOSA1 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo BSM75GD120DN2BOSA1 zanen fil da zane-zane da kuma tsarin amfani da aiki, BSM75GD120DN2BOSA1 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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