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IPD60R520C6ATMA1 Ƙayyadaddun Fasaha

MOSFET N-CH 600V 8.1A TO252

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ C6
Part Status Obsolete
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520m Ω @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 8.1A
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 153 mJ
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 66W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 230μA
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.52Ohm
DS Breakdown Voltage-Min 600V
RoHS Status RoHS Compliant
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