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IPW90R1K0C3FKSA1 Ƙayyadaddun Fasaha

MOSFET N-CH 900V 5.7A TO-247

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 370μA
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 400 ns
JEDEC-95 Code TO-247AD
Max Dual Supply Voltage 900V
Pulsed Drain Current-Max (IDM) 12A
RoHS Status RoHS Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 89W Tc
Power Dissipation 89W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1Ohm
Avalanche Energy Rating (Eas) 97 mJ
Lead Free Lead Free
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