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MOSFET N-CH 30V 14A 8-SOIC

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Discontinued
Number of Terminations 8
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 1
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.008Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 14A
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 320 mJ
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