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IRF8910GPBF Ƙayyadaddun Fasaha

MOSFET 2N-CH 20V 10A 8-SO

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number IRF8910GPBF
Element Configuration Dual
Turn On Delay Time 6.2 ns
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.55V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A
Rise Time 10ns
Fall Time (Typ) 4.1 ns
Continuous Drain Current (ID) 10A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Rds On Max 13.4 mΩ
Width 3.9878mm
RoHS Status RoHS Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 2W
Number of Elements 2
Power Dissipation 2W
Power - Max 2W
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 9.7 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 960pF
Drain to Source Resistance 18.3mOhm
Height 1.4986mm
Radiation Hardening No
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