IRFB4019PBF Ƙayyadaddun Fasaha

IRFB4019PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 95MOhm
Technology MOSFET (Metal Oxide)
Number of Channels 1
Element Configuration Single
Power Dissipation 80mW
Turn On Delay Time 7 ns
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 4.9V @ 50μA
Current - Continuous Drain (Id) @ 25°C 17A Tc
Rise Time 13ns
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Threshold Voltage 4.9V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 150V
Max Junction Temperature (Tj) 175°C
Height 19.8mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7.8 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 150V
Recovery Time 96 ns
Nominal Vgs 4.9 V
Length 10.6426mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Sashe # Mai ƙira Kashi samuwa
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IRFB4020PBF Infineon Technologies Ƙananan MOSFETs Transistors
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