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IRFS23N20DTRLP Ƙayyadaddun Fasaha

MOSFET N-CH 200V 24A D2PAK

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 100mOhm
Voltage - Rated DC 200V
Terminal Form GULL WING
Current Rating 24A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 250 mJ
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 24A Tc
Rise Time 32ns
Vgs (Max) ±30V
Turn-Off Delay Time 26 ns
Threshold Voltage 5.5V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 5.5 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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