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IRGB15B60KDPBF Ƙayyadaddun Fasaha

IRGB15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 139W
Number of Elements 1
Power Dissipation 208W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Reverse Recovery Time 92 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
IGBT Type NPT
Current - Collector Pulsed (Icm) 62A
Switching Energy 220μJ (on), 340μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Length 10.54mm
Radiation Hardening No
RoHS Status RoHS Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature ULTRA FAST
Voltage - Rated DC 600V
Current Rating 31A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 34 ns
Rise Time 16ns
Turn-Off Delay Time 184 ns
Max Collector Current 31A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.2V
Test Condition 400V, 15A, 22 Ω, 15V
Turn Off Time-Nom (toff) 231 ns
Gate Charge 56nC
Td (on/off) @ 25°C 34ns/184ns
Gate-Emitter Voltage-Max 20V
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
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