IPD088N06N3 G Ƙayyadaddun Fasaha

IPD088N06N3 G Infineon Technologies

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 34µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 71W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 60V
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO252-3
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 50A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 30V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
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