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ES6U3T2CR Ƙayyadaddun Fasaha

MOSFET N-CH 30V 1.4A WEMT6

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 1mA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 240 mOhm @ 1.4A, 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta)
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 6-WEMT
Power Dissipation (Max) 700mW (Ta)
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V
FET Feature Schottky Diode (Isolated)
Drain to Source Voltage (Vdss) 30V
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ES6U3T2CR masana'antun iri: LAPIS Semiconductor, Bonchip hannun jari, ES6U3T2CR farashin tunani. ES6U3T2CR sigogi, ES6U3T2CR Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da ES6U3T2CR Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo ES6U3T2CR zanen fil da zane-zane da kuma tsarin amfani da aiki, ES6U3T2CR koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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