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VN0300L-G Ƙayyadaddun Fasaha

Transistor: N-MOSFET; unipolar; 30V; 1W; TO92; 1A

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Terminal Position BOTTOM
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 640mA Tj
Vgs (Max) ±30V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 30V
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Continuous Drain Current (ID) 640mA
Drain Current-Max (Abs) (ID) 0.64A
Feedback Cap-Max (Crss) 50 pF
Length 5.21mm
Radiation Hardening No
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