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APTM100SK33T1G Ƙayyadaddun Fasaha

MOSFET N-CH 1000V 23A SP1

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Microsemi
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 2.5mA
Supplier Device Package SP1
Power Dissipation (Max) 390W (Tc)
Package / Case SP1
Mounting Type Chassis Mount
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 23A
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 396 mOhm @ 18A, 10V
Packaging Bulk
Operating Temperature -40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 7868pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 1000V (1kV)
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