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SI2337DS-T1-GE3 Ƙayyadaddun Fasaha

MOSFET P-CH 80V 2.2A SOT23-3

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -50°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs 270 mOhm @ 1.2A, 10V
Packaging Tape & Reel (TR)
Other Names SI2337DS-T1-GE3-ND SI2337DS-T1-GE3TR SI2337DST1GE3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 33 Weeks
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Detailed Description P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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SI2337DS-T1-GE3 Takardu

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SI2337DS-T1-GE3 masana'antun iri: Electro-Films (EFI) / Vishay, Bonchip hannun jari, SI2337DS-T1-GE3 farashin tunani. SI2337DS-T1-GE3 sigogi, SI2337DS-T1-GE3 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da SI2337DS-T1-GE3 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo SI2337DS-T1-GE3 zanen fil da zane-zane da kuma tsarin amfani da aiki, SI2337DS-T1-GE3 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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