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FCP22N60N Ƙayyadaddun Fasaha

FCP22N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Resistance 165mOhm
Min Operating Temperature -55°C
Number of Elements 1
Element Configuration Single
Turn On Delay Time 16.9 ns
Rds On (Max) @ Id, Vgs 165mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±45V
Turn-Off Delay Time 49 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 600V
Recovery Time 53 ns
Rds On Max 165 mΩ
Height 9.4mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Weight 1.8g
Packaging Tube
Series SupreMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 205W Tc
Power Dissipation 205W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 22A Tc
Rise Time 16.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.95nF
Drain to Source Resistance 140mOhm
Nominal Vgs 3 V
Length 10.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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