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FCPF7N60YDTU Ƙayyadaddun Fasaha

MOSFET N-CH 600V 7A TO-220F

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Weight 2.565g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.6Ohm
Height 16.07mm
Width 4.9mm
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series SuperFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 31W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 55ns
Vgs (Max) ±30V
Turn-Off Delay Time 75 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 600V
Length 10.36mm
Radiation Hardening No
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