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FDD8882 Ƙayyadaddun Fasaha

FDD8882 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 30V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 55W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 55A
Number of Elements 1
Element Configuration Single
Power Dissipation 55W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12.6A Ta 55A Tc
Rise Time 82ns
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 30V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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