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FDG6303N Ƙayyadaddun Fasaha

FDG6303N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 25V
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Fall Time (Typ) 8.5 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 800 mV
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Weight 28mg
Operating Temperature -55°C~150°C TJ
Published 1999
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 450mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 300mW
Current Rating 500mA
Element Configuration Dual
Power Dissipation 300mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 450m Ω @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Rise Time 8.5ns
Turn-Off Delay Time 17 ns
Threshold Voltage 800mV
Drain Current-Max (Abs) (ID) 0.5A
Dual Supply Voltage 25V
FET Feature Logic Level Gate
Height 1mm
Width 1.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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Sauran sun hada da   "FDG63"   sassa

Abubuwan da ke biyowa sun haɗa da  'FDG63' 

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