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FDPF041N06BL1 Ƙayyadaddun Fasaha

MOSFET N-CH 60V 77A TO-220F

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Power Dissipation-Max 44.1W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 29 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 77A Tc
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 308A
Avalanche Energy Rating (Eas) 365 mJ
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Weight 2.27g
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 77A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5690pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0041Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
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