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MJE182STU Ƙayyadaddun Fasaha

MJE182STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Ƙwarewar BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 80V
Current Rating 3A
Base Part Number MJE182
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 100V
hFE Min 50
Length 8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Operating Temperature 150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.5W
Frequency 50MHz
Number of Elements 1
Power Dissipation 1.5W
Gain Bandwidth Product 50MHz
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1.7V
Emitter Base Voltage (VEBO) 7V
Height 11mm
Width 3.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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