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NGTG25N120FL2WG Ƙayyadaddun Fasaha

Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙananan IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 385W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.4V
Collector Emitter Breakdown Voltage 1.2kV
Turn On Time 178 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 100A
Switching Energy 1.95mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Lead Free Lead Free
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power - Max 385W
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Turn Off Time-Nom (toff) 430 ns
Gate Charge 178nC
Td (on/off) @ 25°C 87ns/179ns
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
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Sashe # Mai ƙira Kashi samuwa
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NGTG20N60L2TF1G ON Semiconductor Ƙananan IGBTs
NGTG25N120FL2WG AMI Semiconductor / ON Semiconductor Transistors - IGBTs - Goma 2588

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