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NJVMJB44H11T4G Ƙayyadaddun Fasaha

NJVMJB44H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Ƙwarewar BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Base Part Number MJB44H11
Number of Elements 1
Power Dissipation 2W
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Length 10.29mm
Radiation Hardening No
Lead Free Lead Free
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory Other Transistors
Frequency 50MHz
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 50MHz
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA
Collector Emitter Breakdown Voltage 80V
Collector Base Voltage (VCBO) 10V
Height 4.83mm
Width 11.05mm
RoHS Status ROHS3 Compliant
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