- Duk Samfura
- Discrete Semiconductors
- Pre-Biased BJT Transistors
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NSBC113EF3T5G
A Stock
Min. : 1
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NSBC113EF3T5G Ƙayyadaddun Fasaha
Trans Digital BJT NPN 50V 0.1A 3-Pin SOT-1123 T/R
Siffar Samfur | Siffata darajar |
---|---|
Category | Discrete Semiconductors / Pre-Biased BJT Transistors |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 5 Weeks |
Mounting Type | Surface Mount |
Surface Mount | YES |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Min Operating Temperature | -55°C |
Subcategory | BIP General Purpose Small Signal |
Terminal Position | DUAL |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Type | NPN - Pre-Biased |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
Resistor - Emitter Base (R2) | 1 k Ω |
RoHS Status | ROHS3 Compliant |
Siffar Samfur | Siffata darajar |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Package / Case | SOT-1123 |
Number of Pins | 3 |
Published | 2012 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
Max Power Dissipation | 254mW |
Terminal Form | FLAT |
Reference Standard | AEC-Q101 |
Polarity | NPN |
Transistor Application | SWITCHING |
Collector Emitter Voltage (VCEO) | 250mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Resistor - Base (R1) | 1 k Ω |
Radiation Hardening | No |
Lead Free | Lead Free |
NSBC113EF3T5G Takardu
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Sashe # | Mai ƙira | Kashi | samuwa |
---|---|---|---|
NSBC113EDXV6T1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2623 |
NSBC113EDXV6T1 | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EDXV6T1 | Rochester Electronics, LLC | BJT Transistors Arrays | |
NSBC113EDXV6T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2611 |
NSBC113EDXV6T1G | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EDXV6T5 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2510 |
NSBC113EDXV6T5 | ON Semiconductor | BJT Transistors Arrays | |
NSBC113EF3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2570 |
NSBC113EPDXV6T1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 2569 |
NSBC113EPDXV6T1 | ON Semiconductor | BJT Transistors Arrays |
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