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MOSFET 2N-CH 30V 1.5A TUMT6

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature 150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Voltage - Rated DC 30V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Element Configuration Dual
Power Dissipation 1W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 240m Ω @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Rise Time 9ns
Turn-Off Delay Time 15 ns
Threshold Voltage 1.5V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
REACH SVHC No SVHC
Lead Free Lead Free
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 6
Resistance 340MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Current Rating 1.5A
Base Part Number *K1
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
RoHS Status ROHS3 Compliant
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