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RN2107MFV,L3F(CT Ƙayyadaddun Fasaha

TRANS PREBIAS PNP 50V 0.1A VESM

Siffar Samfur Siffata darajar
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Package / Case SOT-723
Part Status Active
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) 47 k Ω
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type PNP - Pre-Biased
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 k Ω
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Sauran sun hada da   "RN210"   sassa

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RN2107MFV,L3F(CT masana'antun iri: Toshiba Semiconductor and Storage, Bonchip hannun jari, RN2107MFV,L3F(CT farashin tunani. RN2107MFV,L3F(CT sigogi, RN2107MFV,L3F(CT Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da RN2107MFV,L3F(CT Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo RN2107MFV,L3F(CT zanen fil da zane-zane da kuma tsarin amfani da aiki, RN2107MFV,L3F(CT koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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