TPC8109(TE12L) Ƙayyadaddun Fasaha

MOSFET P-CH 30V 10A 8-SOP

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package 8-SOP (5.5x6.0)
Power Dissipation (Max) 1W (Ta)
Package / Case 8-SOIC (0.173", 4.40mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 20 mOhm @ 5A, 10V
Packaging Original-Reel®
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 10V
FET Type P-Channel
Drain to Source Voltage (Vdss) 30V
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TPC8109(TE12L) Takardu

Zazzage takaddun bayanai da takaddun masana'anta don TPC8109(TE12L)

Sauran sun hada da   "TPC81"   sassa

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TPC8109(TE12L) masana'antun iri: Toshiba Semiconductor and Storage, Bonchip hannun jari, TPC8109(TE12L) farashin tunani. TPC8109(TE12L) sigogi, TPC8109(TE12L) Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da TPC8109(TE12L) Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo TPC8109(TE12L) zanen fil da zane-zane da kuma tsarin amfani da aiki, TPC8109(TE12L) koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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