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SI2335DS-T1-E3 Ƙayyadaddun Fasaha

MOSFET P-CH 12V 3.2A SOT23

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Supplier Device Package SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs 51 mOhm @ 4A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V
FET Type P-Channel
Drain to Source Voltage (Vdss) 12V
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 750mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
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SI2335DS-T1-E3 masana'antun iri: Vishay / Siliconix, Bonchip hannun jari, SI2335DS-T1-E3 farashin tunani. SI2335DS-T1-E3 sigogi, SI2335DS-T1-E3 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da SI2335DS-T1-E3 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo SI2335DS-T1-E3 zanen fil da zane-zane da kuma tsarin amfani da aiki, SI2335DS-T1-E3 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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