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SI3493BDV-T1-E3 Ƙayyadaddun Fasaha

MOSFET P-CH 20V 8A 6-TSOP

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 900mV @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 43.5nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 27.5 mOhm @ 7A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
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SI3493BDV-T1-E3 Takardu

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Sauran sun hada da   "SI349"   sassa

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Sashe # Mai ƙira Kashi samuwa
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SI3493BDV-T1-GE3-S Vishay Precision Group Specialized Hot ICs 3469

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SI3493BDV-T1-E3 masana'antun iri: Vishay / Siliconix, Bonchip hannun jari, SI3493BDV-T1-E3 farashin tunani. SI3493BDV-T1-E3 sigogi, SI3493BDV-T1-E3 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da SI3493BDV-T1-E3 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo SI3493BDV-T1-E3 zanen fil da zane-zane da kuma tsarin amfani da aiki, SI3493BDV-T1-E3 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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