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SQS850EN-T1_GE3 Ƙayyadaddun Fasaha

MOSFET N-CH 60V 12A POWERPAK1212

Siffar Samfur Siffata darajar
Category Tsarin Semiconductor Mai Tsanani / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 21.5 mOhm @ 6.1A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2021pF @ 30V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
Siffar Samfur Siffata darajar
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PowerPAK® 1212-8
Power Dissipation (Max) 33W (Tc)
Package / Case PowerPAK® 1212-8
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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Sashe # Mai ƙira Kashi samuwa
SQS850EN-T1-GE3 SIGNAQUES Specialized Hot ICs 6205
SQS850EN-T1_GE3 Vishay Siliconix Ƙananan MOSFETs Transistors

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SQS850EN-T1_GE3 masana'antun iri: Electro-Films (EFI) / Vishay, Bonchip hannun jari, SQS850EN-T1_GE3 farashin tunani. SQS850EN-T1_GE3 sigogi, SQS850EN-T1_GE3 Datasheet PDF da fil zazzage bayanin zane. Kuna iya amfani da SQS850EN-T1_GE3 Masu haɗawa masu toshewa, DSP Kwanan wata PDF, nemo SQS850EN-T1_GE3 zanen fil da zane-zane da kuma tsarin amfani da aiki, SQS850EN-T1_GE3 koyawa na lantarki.Zaka iya saukewa daga Bonchip.
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